(China (Mainland))
Product Summary
The BFP620E7764 is a NPN Silicon Germanium RF Transistor.
Parametrics
BFP620E7764 maximum ratings: (1)Collector-emitter voltage VCEO 2.3 V; (2)Collector-emitter voltage VCES 7.5 V; (3)Collector-base voltage VCBO 7.5 V; (4)Emitter-base voltage VEBO 1.2 V; (5)Collector current IC 80 mA; (6)Base current IB 3 mA; (7)Junction temperature Tj 150 ℃; (8)Ambient temperature TA -65 to 150 ℃; (9)Storage temperature Tstg -65 to 150 ℃.
Features
BFP620E7764 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz; (5)Gold metallization for extra high reliability.
Diagrams
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 BFP620 |
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BFP620_E7764 |
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BFP620E6327 |
Infineon Technologies |
TRANS NPN RF 2.3V SOT-343 |
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Negotiable |
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BFP620F |
Other |
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Negotiable |
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BFP620F E7764 |
Other |
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Negotiable |
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BFP640 |
Other |
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Data Sheet |
Negotiable |
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