(China (Mainland))
Product Summary
The SI4431ADY-T1-E3 is a P-channel 30V(D-S)MOSFET.
Parametrics
SI4431ADY-T1-E3 absolute maxing ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ=150℃), TA=25℃, ID: -7.2/-5.3A; TA=70℃, -5.8/-4.2A; (4)Pulsed Drain Current IDM: -30A; (5)continuous Source Current (Diode Conduction) IS: -2.1/-1.3A; (6)Maximum Power Dissipation, TA=25℃, PD: 2.5/1.35W; TA=70℃: 1.6/0.87W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150℃.
Features
SI4431ADY-T1-E3 features: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI4431ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 7A 2.5W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4401BDY |
Other |
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Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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|
SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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|
SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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